Транзистор IGBT IXGA30N120B3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8066083273
- Артикул
- IXGA30N120B3
- Бренд
- Ixys Corporation
- Case
- TO263
- Brand:
- IXYS
- Series:
- IXGA30N120
- Mounting
- SMD
Цена по запросу
(от 2 800 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: IGBT, GenX3™, 1,2кВ, 30А, 300Вт, TO263 Характеристики Категория Транзистор Тип БТИЗ Вид IGBT
Технические параметры
| Case | TO263 |
| Brand: | IXYS |
| Series: | IXGA30N120 |
| Mounting | SMD |
| Packaging: | Tube |
| Technology | GenX3™, PT |
| Tradename: | GenX3 |
| Вес, г | 1.49 |
| Gate charge | 87nC |
| Technology: | Si |
| Subcategory: | IGBTs |
| Turn-on time | 56ns |
| Manufacturer: | IXYS |
| Product Type: | IGBT Transistors |
| Turn-off time | 471ns |
| Configuration: | Single |
| Kind of package | tube |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Collector current | 30A |
| Power dissipation | 300W |
| Product Category: | IGBT Transistors |
| Type of transistor | IGBT |
| Gate-emitter voltage | ±20V |
| Pd - Power Dissipation: | 300 W |
| Pulsed collector current | 150A |
| Collector-emitter voltage | 1.2kV |
| Operating Temperature Range: | -55 C to+150 C |
| Continuous Collector Current: | 60 A |
| Gate-Emitter Leakage Current: | 100 nA |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Continuous Collector Current Ic Max: | 150 A |
| Collector-Emitter Saturation Voltage: | 3.05 V |
| Continuous Collector Current at 25 C: | 60 A |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |