IXFN180N15P, Модуль, одиночный транзистор, 150В, 150А, SOT227B, Ugs: ±30В, 680Вт
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- Код товара
- 8026674292
- Артикул
- IXFN180N15P
- Бренд
- Ixys Corporation
- Case
- SOT227B
- Type:
- HiperFET
- Width
- 25.42mm
- Brand:
- IXYS
Цена по запросу
(от 7 740 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Модуль, одиночный транзистор, 150В, 150А, SOT227B, Ugs: ±30В, 680Вт Характеристики Категория Транзистор Тип модуль Вид MOSFET
Технические параметры
| Case | SOT227B |
| Type: | HiperFET |
| Width | 25.42mm |
| Brand: | IXYS |
| Series | HiperFET, Polar |
| Series: | IXFN180N15 |
| Product: | Power MOSFET Modules |
| Pin Count | 4 |
| Fall Time: | 36 ns |
| Packaging: | Tube |
| Rise Time: | 32 ns |
| Technology | HiPerFET™, PolarHT™ |
| Tradename: | HiPerFET |
| Вес, г | 36.59 |
| Gate charge | 240nC |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-227 |
| Polarisation | unipolar |
| Subcategory: | Discrete Semiconductor Modules |
| Drain current | 150A |
| Manufacturer: | IXYS |
| Mounting Type | Screw Mount |
| Product Type: | Discrete Semiconductor Modules |
| Configuration: | Single |
| Type of module | MOSFET transistor |
| Kind of channel | enhancement |
| Mounting Style: | Screw Mounts |
| Package / Case: | SOT-227-4 |
| Power dissipation | 680W |
| Product Category: | Discrete Semiconductor Modules |
| Electrical mounting | screw |
| Gate-source voltage | ±30V |
| Mechanical mounting | screw |
| Number of Channels: | 1 Channel |
| On-state resistance | 11mΩ |
| Transistor Material | Si |
| Drain-source voltage | 150V |
| Pulsed drain current | 380A |
| Transistor Polarity: | N-Channel |
| Reverse recovery time | 200ns |
| Pd - Power Dissipation: | 680 W |
| Semiconductor structure | single transistor |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 680 W |
| Typical Gate Charge @ Vgs | 240 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 30 ns |
| Maximum Drain Source Voltage | 150 V |
| Typical Turn-Off Delay Time: | 150 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 150 A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 11 mΩ |
| Maximum Continuous Drain Current | 150 A |
| Rds On - Drain-Source Resistance: | 11 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |