HiperFET, X2-Class N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2
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- Код товара
- 8010472067
- Артикул
- IXFK100N65X2
- Бренд
- Ixys Corporation
- MSL
- MSL 1-Unlimited
- Case
- TO264
- Width
- 26.3mm
- Brand:
- IXYS
Цена по запросу
(от 5 460,87 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Серия мощныx МОП-транзисторов IXYS X2 класса HiPerFET значительно снижает сопротивление и заряд затвора по сравнению с предыдущими поколениями мощныx МОП-транзисторов, что приводит к снижению потерь и повышению эффективности работы.
Технические параметры
| MSL | MSL 1-Unlimited |
| Case | TO264 |
| Width | 26.3mm |
| Brand: | IXYS |
| Series | HiperFET, X2-Class |
| Series: | 650V Ultra Junction X2 |
| Mounting | THT |
| Pin Count | 3 |
| Fall Time: | 7 ns |
| Packaging: | Tube |
| Rise Time: | 24 ns |
| Tradename: | HiPerFET |
| Вес, г | 1 |
| Gate charge | 183nC |
| No. of Pins | 3Pins |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | IXYS |
| Package Type | TO-264P |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 100A |
| Manufacturer: | IXYS |
| Mounting Type | Through Hole |
| Product Range | HiPerFET |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-264-3 |
| Power dissipation | 1.04kW |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 180 nC |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| On-state resistance | 30mΩ |
| Transistor Material | Si |
| Transistor Mounting | Through Hole |
| Drain-source voltage | 650V |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.4V |
| Reverse recovery time | 200ns |
| Transistor Case Style | TO-264P |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 1.04 kW |
| Drain Source Voltage Vds | 650V |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.04 kW |
| Operating Temperature Max | 150°C |
| Typical Gate Charge @ Vgs | 183 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Continuous Drain Current Id | 100A |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 59 ns |
| Maximum Drain Source Voltage | 650 V |
| Typical Turn-Off Delay Time: | 83 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 100 A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2.7V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 40 S |
| Maximum Drain Source Resistance | 30 mΩ |
| Maximum Continuous Drain Current | 100 A |
| Features of semiconductor devices | ultra junction x-class |
| Gate Source Threshold Voltage Max | 5V |
| Rds On - Drain-Source Resistance: | 30 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 25 |
| Максимальное напряжение сток-исток Uси,В | 650 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 100 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1040 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±30В |