IXFA4N100Q, Транзистор: N-MOSFET; полевой; 1кВ; 4А; Idm: 16А; 150Вт; TO263AA
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062246737
- Артикул
- IXFA4N100Q
- Бренд
- Ixys Corporation
- Brand:
- IXYS
- Fall Time:
- 18 ns
- Packaging:
- Tube
- Rise Time:
- 15 ns
Цена по запросу
(от 1 230,92 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | IXYS |
| Fall Time: | 18 ns |
| Packaging: | Tube |
| Rise Time: | 15 ns |
| Вес, г | 1.51 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Package/Case: | D2PAK-3(TO-263-3) |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 39 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 50 |
| Pd - Power Dissipation: | 150 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 17 ns |
| Typical Turn-Off Delay Time: | 32 ns |
| Id - Continuous Drain Current: | 4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 3 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |