IXFA22N65X2, Транзистор N-MOSFET, X2-Class, полевой, 650В, 22А, 390Вт, TO263
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062467699
- Артикул
- IXFA22N65X2
- Бренд
- Ixys Corporation
- Brand
- IXYS
- Width
- 11.05mm
- Brand:
- IXYS
- Series
- HiperFET, X2-Class
Цена по запросу
(от 772,30 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Серия мощныx МОП-транзисторов IXYS X2 класса HiPerFET значительно снижает сопротивление и заряд затвора по сравнению с предыдущими поколениями мощныx МОП-транзисторов, что приводит к снижению потерь и повышению эффективности работы.
Технические параметры
| Brand | IXYS |
| Width | 11.05mm |
| Brand: | IXYS |
| Series | HiperFET, X2-Class |
| Series: | 650V Ultra Junction X2 |
| Pin Count | 3 |
| Fall Time: | 10 ns |
| Packaging: | Tube |
| Rise Time: | 35 ns |
| Tradename: | HiPerFET |
| Вес, г | 1.52 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D2PAK(TO-263) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | IXYS |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 38 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.4V |
| Pd - Power Dissipation: | 360 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 390 W |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 38 ns |
| Maximum Drain Source Voltage | 650 V |
| Typical Turn-Off Delay Time: | 33 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 22 A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2.7V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 8 S |
| Maximum Drain Source Resistance | 145 mΩ |
| Maximum Continuous Drain Current | 22 A |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |