IXBH2N250, 32W -55°C~+150°C@(Tj) 5A 2500V 13A TO-247-3 IGBTs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017628779
- Артикул
- IXBH2N250
- Бренд
- Ixys Corporation
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Brand:
- IXYS
- Series
- BIMOSFETв„ў ->
Цена по запросу
(от 1 814,30 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
IGBT 2500V 5A 32 Вт со сквозным отверстием TO-247AD (IXBH)
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Brand: | IXYS |
| Series | BIMOSFETв„ў -> |
| Package | Tube |
| Input Type | Standard |
| Packaging: | Tube |
| Вес, г | 8.54 |
| Gate Charge | 10.6nC |
| Power - Max | 32W |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| REACH Status | REACH Unaffected |
| Subcategory: | IGBTs |
| Manufacturer: | IXYS |
| Mounting Type | Through Hole |
| Package/Case: | TO-247-3 |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Package / Case | TO-247-3 |
| Mounting Style: | Through Hole |
| Product Category: | IGBT Transistors |
| California Prop 65 | Warning Information |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Factory Pack Quantity: | 30 |
| Pd - Power Dissipation: | 32 W |
| Supplier Device Package | TO-247AD (IXBH) |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 2A |
| Reverse Recovery Time (trr) | 920ns |
| Gate-Emitter Leakage Current: | 100 nA |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Current - Collector (Ic) (Max) | 5A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Current - Collector Pulsed (Icm) | 13A |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Collector- Emitter Voltage VCEO Max: | 2.5 kV |
| Continuous Collector Current Ic Max: | 13 A |
| Collector-Emitter Saturation Voltage: | 3.8 V |
| Continuous Collector Current at 25 C: | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 2500V |