ISZ810P06LMATMA1, MOSFETs TRENCH =100V, Транзистор
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070819265
- Артикул
- ISZ810P06LMATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 5.9 ns
- Rise Time:
- 15.8 ns
- Вес, г
- 0.08
Цена по запросу
(от 125,67 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 5.9 ns |
| Rise Time: | 15.8 ns |
| Вес, г | 0.08 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | TSDSON-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | ISZ810P06LM SP005412126 |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 16 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation: | 83 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 6.2 ns |
| Typical Turn-Off Delay Time: | 23 ns |
| Id - Continuous Drain Current: | 19.5 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 22 S |
| Rds On - Drain-Source Resistance: | 81 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |