ISZ75DP15LMATMA1, 150V 5.1A 50W 770m @4.5V 2V@543uA MOSFETs ROHS
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- Код товара
- 8062341382
- Артикул
- ISZ75DP15LMATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series:
- ISZ75DP15
- Fall Time:
- 7.9 ns
- Packaging:
- Reel, Cut Tape
Цена по запросу
(от 146,30 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Series: | ISZ75DP15 |
| Fall Time: | 7.9 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 5.1 ns |
| Вес, г | 0.08 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | PG-TSDSON-8 |
| Part # Aliases: | ISZ75DP15LM SP005412142 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 22.9 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 50 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 4.5 ns |
| Typical Turn-Off Delay Time: | 10 ns |
| Id - Continuous Drain Current: | 5.1 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 8.4 S |
| Rds On - Drain-Source Resistance: | 750 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |