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ISZ019N03L5SATMA1, 30V 1.9mOhm@20A,10V N Channel TSDSON-8-FL MOSFETs

ISZ019N03L5SATMA1, 30V 1.9mOhm@20A,10V N Channel TSDSON-8-FL MOSFETs

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Код товара
8070108789
Артикул
ISZ019N03L5SATMA1
Бренд
INFINEON TECHNOLOGIES AG.
Q(g)
22 nC
V(DS)
30 V
Brand:
Infineon Technologies
Package
TDSON-8FL
Цена по запросу
(от 94 ₽)
Минимальный заказ: 5000 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

МОП-транзистор TRENCH <= 40V

Технические параметры

Q(g)22 nC
V(DS)30 V
Brand:Infineon Technologies
PackageTDSON-8FL
R(thJC)1.8 K/W
MountingSMD
PackagingREEL
Pin Count8
AutomotiveNO
Packaging:Reel, Cut Tape
TechnologyOptiMOS
Вес, г0.11
Logic levelNO
RoHS StatusRoHS-conform
Technology:Si
Channel ModeEnhancement
Channel TypeN
Package TypePG-TSDSON-8 FL
Subcategory:MOSFETs
Channel Mode:Enhancement
ConfigurationN-CH
Manufacturer:Infineon
Mounting TypeSurface Mount
Package/Case:TDSON-8
Product Type:MOSFET
RDS(on)at 10V1.6 mOhm
Fast bodydiodeNO
I(D)at Tc=25°C40 A
Mounting Style:SMD/SMT
Part # Aliases:ISZ019N03L5S SP005408602
Product Category:MOSFET
Qg - Gate Charge:22 nC
Number of Channels:1 Channel
Transistor Polarity:N-Channel
Factory Pack Quantity:5000
Total Gate Charge (Qg@Vgs)44nC@10V
Vgs - Gate-Source Voltage:-20 V, +20 V
Number of Elements per Chip1
Input Capacitance (Ciss@Vds)2.8nF@15V
Maximum Drain Source Voltage30 V
Continuous Drain Current (Id)22A;40A
Id - Continuous Drain Current:40 A
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
Maximum Continuous Drain Current40 A
Rds On - Drain-Source Resistance:1.9 mOhms
Vds - Drain-Source Breakdown Voltage:30 V
Vgs th - Gate-Source Threshold Voltage:1.2 V

Техническая документация