ISC16DP15LMATMA1, MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062442869
- Артикул
- ISC16DP15LMATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 32.06 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 18.24 ns
Цена по запросу
(от 373,83 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 32.06 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 18.24 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TDSON-8 |
| Part # Aliases: | ISC16DP15LM SP005412118 |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 46 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation: | 188 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 67.76 ns |
| Typical Turn-Off Delay Time: | 73.92 ns |
| Id - Continuous Drain Current: | 22 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 31 S |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |