Infineon ISC Type N-Channel Power Transistor, 142 A, 135 V Enhancement, 8-Pin PG-TDSON-8 ISC046N13NM6ATMA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063705673
- Артикул
- ISC046N13NM6ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 7.2 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 7.3 ns
Цена по запросу
(от 490 ₽)
Минимальный заказ: 5000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 7.2 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 7.3 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TDSON-8 |
| Part # Aliases: | ISC046N13NM6 |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 65 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation: | 211 W |
| Typical Turn-On Delay Time: | 15 ns |
| Typical Turn-Off Delay Time: | 24 ns |
| Id - Continuous Drain Current: | 142 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 55 S |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |