IRLU3636PBF, Trans MOSFET N-CH Si 60V 99A 3-Pin(3+Tab) IPAK Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8047967630
- Артикул
- IRLU3636PBF
- Бренд
- International Rectifier
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Material
- Si
Цена по запросу
(от 400 ₽)
Минимальный заказ: 237 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET N-CH Si 60V 99A 3-контактный (3 + язычка) IPAK-трубка
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Material | Si |
| Mounting | Through Hole |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 2.39(Max)mm |
| Package Length | 6.73(Max)mm |
| Product Category | Power MOSFET |
| Supplier Package | IPAK |
| Maximum IDSS (uA) | 20 |
| Process Technology | HEXFET |
| Структура | N-Channel |
| Standard Package Name | TO-251 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 96 |
| Typical Rise Time (ns) | 216 |
| Особенности | логические уровни |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 143000 |
| Typical Gate Charge @ Vgs (nC) | 33@4.5V |
| Maximum Gate-Source Voltage (V) | ±16 |
| Typical Output Capacitance (pF) | 332 |
| Typical Turn-On Delay Time (ns) | 45 |
| Maximum Drain-Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 3.4 |
| Typical Turn-Off Delay Time (ns) | 43 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Typical Gate to Drain Charge (nC) | 15 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 11 |
| Typical Reverse Recovery Time (ns) | 27 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 99 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 3779@50V |
| Typical Reverse Recovery Charge (nC) | 31 |
| Maximum Drain-Source Resistance (mOhm) | 6.8@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 16 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 396 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 5.4@10V|6.6@4.5V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 163@50V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 99 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |