IRLU110PBF, Транзистор: N-MOSFET; полевой; 100В; 4,3А; Idm: 17А; 25Вт; IPAK
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- Код товара
- 8062241168
- Артикул
- IRLU110PBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- IPAK, TO251
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Package
- Tube
Цена по запросу
(от 171,64 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET; полевой; 100В; 4,3А; Idm: 17А; 25Вт; IPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | IPAK, TO251 |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Package | Tube |
| FET Type | N-Channel |
| Mounting | THT |
| Vgs (Max) | В±10V |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 0.4 |
| Gate charge | 6.1nC |
| RoHS Status | ROHS3 Compliant |
| Manufacturer | VISHAY |
| Polarisation | unipolar |
| Drain current | 4.3A |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Kind of channel | enhanced |
| Kind of package | tube |
| Power dissipation | 25W |
| Type of transistor | N-MOSFET |
| Vgs(th) (Max) @ Id | 2V @ 250ВµA |
| Base Product Number | IRLU110 -> |
| Gate-source voltage | ±10V |
| On-state resistance | 0.54Ω |
| Drain-source voltage | 100V |
| Pulsed drain current | 17A |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 2.6A, 5V |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Supplier Device Package | TO-251AA |
| Gate Charge (Qg) (Max) @ Vgs | 6.1nC @ 5V |
| Drain to Source Voltage (Vdss) | 100V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Features of semiconductor devices | logic level |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Current - Continuous Drain (Id) @ 25В°C | 4.3A (Tc) |