IRLR3410TRPBF, Транзистор N-МОП, полевой, HEXFET,logic level, 100В, 15А, 52Вт
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- Код товара
- 8017539082
- Артикул
- IRLR3410TRPBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 6.22mm
- Series
- HEXFET
- Pin Count
- 3
- Вес, г
- 0.42
Цена по запросу
(от 53,26 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, HEXFET,logic level, 100В, 15А, 52Вт
Технические параметры
| Width | 6.22mm |
| Series | HEXFET |
| Pin Count | 3 |
| Вес, г | 0.42 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DPAK(TO-252) |
| Mounting Type | Surface Mount |
| Transistor Material | Si |
| Transistor Polarity | N Channel |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 79 W |
| Typical Gate Charge @ Vgs | 34 nC @ 5 V |
| Vgs - Gate-Source Voltage | 2V @ 250uA |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | 155 mΩ |
| Maximum Continuous Drain Current | 17 A |
| Rds On - Drain-Source Resistance | 105mО© @ 10A,10V |
| Power Dissipation-Max (Ta=25В°C) | 79W(Tc) |
| Vds - Drain-Source Breakdown Voltage | 100V |
| Continuous Drain Current (Id) @ 25В°C | 17A(Tc) |