IRLR024NTRLPBF, Trans MOSFET N-CH Si 55V 17A 3-Pin(2+Tab) DPAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048070427
- Артикул
- IRLR024NTRLPBF
- Бренд
- International Rectifier
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Material
- Si
Цена по запросу
(от 120 ₽)
Минимальный заказ: 747 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH Si 55V 17A 3-контактный(2+Tab) DPAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Material | Si |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 6.22(Max)mm |
| Package Length | 6.73(Max)mm |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 25 |
| Process Technology | HEXFET |
| Структура | N-Channel |
| Standard Package Name | TO-252 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 29 |
| Typical Rise Time (ns) | 74 |
| Особенности | кристалл |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 45000 |
| Typical Gate Charge @ Vgs (nC) | 15(Max)@5V |
| Maximum Gate-Source Voltage (V) | ±16 |
| Typical Output Capacitance (pF) | 130 |
| Typical Turn-On Delay Time (ns) | 7.1 |
| Maximum Drain-Source Voltage (V) | 55 |
| Typical Gate Plateau Voltage (V) | 3.6 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Typical Gate to Drain Charge (nC) | 8.5(Max) |
| Maximum Gate Threshold Voltage (V) | 2 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 3.7(Max) |
| Typical Reverse Recovery Time (ns) | 60 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 17 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 480@25V |
| Typical Reverse Recovery Charge (nC) | 130 |
| Maximum Drain-Source Resistance (mOhm) | 65@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 16 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 72 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 61@25V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 55 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 17 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 45 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±16В |