IRLP3034PBF, Транзистор N-МОП, полевой, HEXFET,logic level, 40В, 327А
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8008513624
- Артикул
- IRLP3034PBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 5.31mm
- Brand:
- Infineon Technologies
- Series
- HEXFET
- FET Type
- N-Channel
Цена по запросу
(от 690 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает широкий ассортимент надежныx N-канальныx и P-канальныx МОП-транзисторныx устройств для управления двигателями.
Технические параметры
| Width | 5.31mm |
| Brand: | Infineon Technologies |
| Series | HEXFET |
| FET Type | N-Channel |
| Pin Count | 3 |
| Vgs (Max) | ±20V |
| Packaging: | Tube |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 8.5 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247AC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-247-3 |
| RoHS Compliant | Yes |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 108 nC |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Структура | N-МОП |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 175°C(TJ) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 195A, 10V |
| Особенности | высокоскоростной мощный ключ |
| Pd - Power Dissipation: | 341 W |
| Power Dissipation (Max) | 341W(Tc) |
| Supplier Device Package | TO-247AC |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 341 W |
| Typical Gate Charge @ Vgs | 108 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 4.5 V |
| Maximum Drain Source Voltage | 40 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 40 V |
| Id - Continuous Drain Current: | 327 A |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 2 mΩ |
| Maximum Continuous Drain Current | 327 A |
| Rds On - Drain-Source Resistance: | 2 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 10315 pF @ 25 V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 195A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
| Factory Pack Quantity: Factory Pack Quantity: | 400 |
| Крутизна характеристики, S | 286 |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 327 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |