IRL510PBF-BE3, MOSFETs TO220 100V 5.6A N-CH MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062241257
- Артикул
- IRL510PBF-BE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Fall Time:
- 18 ns
- Packaging:
- Tube
- Rise Time:
- 47 ns
Цена по запросу
(от 189,10 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay/Siliconix |
| Fall Time: | 18 ns |
| Packaging: | Tube |
| Rise Time: | 47 ns |
| Вес, г | 1.95 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Part # Aliases: | IRL510PBF |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 6.1 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 1000 |
| Pd - Power Dissipation: | 43 W |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Typical Turn-On Delay Time: | 9.3 ns |
| Typical Turn-Off Delay Time: | 16 ns |
| Id - Continuous Drain Current: | 5.6 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 540 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |