IRFZ24PBF, MOSFETs TO220 N-CH 60V 17A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005524586
- Артикул
- IRFZ24PBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- Case
- TO220AB
- PPAP
- No
- EU RoHS
- Compliant
Цена по запросу
(от 163,35 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзистор N-Chan 60V 17 Amp
Технические параметры
| Tab | Tab |
| Case | TO220AB |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | THT |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 6 |
| Длина | 10.41 mm |
| Серия | IRFZ |
| Gate charge | 25nC |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | VISHAY |
| Package Type | TO-220AB |
| Polarisation | unipolar |
| Высота | 15.49 mm |
| Корпус | to220 |
| Ширина | 4.7 mm |
| Configuration | Single |
| Drain current | 17A |
| Mounting Type | Through Hole |
| Package Width | 4.7(Max) |
| Package Length | 10.41(Max) |
| Kind of channel | enhanced |
| Kind of package | tube |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Упаковка | Tube |
| Power dissipation | 60W |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±20V |
| On-state resistance | 0.1Ω |
| Transistor Material | Si |
| Drain-source voltage | 60V |
| Pulsed drain current | 68A |
| Технология | Si |
| Standard Package Name | TO |
| Вид монтажа | Through Hole |
| Typical Fall Time (ns) | 42 |
| Typical Rise Time (ns) | 58 |
| Особенности | - |
| Тип продукта | MOSFET |
| Transistor Configuration | Single |
| Подкатегория | MOSFETs |
| Maximum Power Dissipation | 60 W |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Торговая марка | Vishay / Siliconix |
| Упаковка / блок | TO-220-3 |
| Maximum Drain Source Voltage | 60 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 60000 |
| Minimum Gate Threshold Voltage | 2V |
| Typical Gate Charge @ 10V (nC) | 25(Max) |
| Typical Gate Charge @ Vgs (nC) | 25(Max)@10V |
| Maximum Drain Source Resistance | 100 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 360 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Continuous Drain Current | 17 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Typical Gate to Drain Charge (nC) | 11(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Typical Gate to Source Charge (nC) | 5.8(Max) |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Категория продукта | МОП-транзистор |
| Maximum Continuous Drain Current (A) | 17 |
| Typical Input Capacitance @ Vds (pF) | 640@25V |
| Typical Reverse Recovery Charge (nC) | 290 |
| Maximum Drain Source Resistance (MOhm) | 100@10V |
| Размер фабричной упаковки | 50 |
| Пороговое напряжение на затворе | 1…2 |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 17 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |