IRFS4310ZTRLPBF, транзистор D2Pak (TO-263)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8059667697
- Артикул
- IRFS4310ZTRLPBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 11.3mm
- Brand:
- Infineon Technologies
- Series
- HEXFET
- Pin Count
- 3
Цена по запросу
(от 110 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Линейка дискретныx силовыx МОП-транзисторов HEXFET® от Infineon включает в себя N-канальные устройства для поверxностного монтажа и свинцовые корпуса.
Технические параметры
| Width | 11.3mm |
| Brand: | Infineon Technologies |
| Series | HEXFET |
| Pin Count | 3 |
| Вес, г | 2.13 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D2PAK(TO-263) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | D2PAK-3 |
| Part # Aliases: | IRFS4310ZTRLPBF SP001557376 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 120 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.3V |
| Pd - Power Dissipation: | 250 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 250 W |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 127 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 6 mΩ |
| Maximum Continuous Drain Current | 127 A |
| Rds On - Drain-Source Resistance: | 4.8 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |