IRFR9310PBF, Транзистор P-МОП, полевой, -400В, -1,8А, 50Вт, DPAK
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- Код товара
- 8070138546
- Артикул
- IRFR9310PBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- No
- Material
- Si
- Mounting
- Surface Mount
Цена по запросу
(от 150,39 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-МОП, полевой, -400В, -1,8А, 50Вт, DPAK
Технические параметры
| Tab | Tab |
| PPAP | No |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 0.39 |
| Серия | IRFR/U |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Упаковка | Tube |
| Maximum IDSS (uA) | 100 |
| Transistor Polarity | P Channel; Continuous Drain Current Id |
| Технология | Si |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 24 |
| Typical Rise Time (ns) | 10 |
| Тип продукта | MOSFET |
| Подкатегория | MOSFETs |
| Number of Elements per Chip | 1 |
| Торговая марка | Vishay/Siliconix |
| Maximum Power Dissipation (mW) | 50000 |
| Typical Gate Charge @ 10V (nC) | 13(Max) |
| Typical Gate Charge @ Vgs (nC) | 13(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 50 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Drain Source Voltage (V) | 400 |
| Typical Gate Plateau Voltage (V) | 5.1 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Maximum Diode Forward Voltage (V) | 4 |
| Typical Gate to Drain Charge (nC) | 5(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 3.2(Max) |
| Typical Reverse Recovery Time (ns) | 170 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Категория продукта | МОП-транзистор |
| Maximum Continuous Drain Current (A) | 1.8 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 270@25V |
| Typical Reverse Recovery Charge (nC) | 640 |
| Maximum Drain Source Resistance (mOhm) | 7000@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 7.2 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 8@25V |
| Размер фабричной упаковки | 3000 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |