Транзистор полевой IRFR9220TRPBF
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062671583
- Артикул
- IRFR9220TRPBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- No
- Width
- 6.22mm
- Brand:
- Vishay Semiconductors
Цена по запросу
(от 100 ₽)
Минимальный заказ: 2000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
В мощныx МОП-транзистораx третьего поколения Vishay используются передовые теxнологии обработки для достижения низкого вxодного сопротивления на площади кремния.
Технические параметры
| Tab | Tab |
| PPAP | No |
| Width | 6.22mm |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant with Exemption |
| Series: | IRFR/U |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 19 ns |
| Rise Time: | 27 ns |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Part # Aliases: | IRFR9220TRPBF-BE3 |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Transistor Type: | 1 P-Channel |
| Maximum IDSS (uA) | 100 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 20 nC |
| Process Technology | HEXFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 19 |
| Typical Rise Time (ns) | 27 |
| Pd - Power Dissipation: | 42 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 42 W |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 8.8 ns |
| Maximum Drain Source Voltage | 200 V |
| Typical Turn-Off Delay Time: | 7.3 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 3.6 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 20(Max) |
| Typical Gate Charge @ Vgs (nC) | 20(Max)@10V |
| Maximum Drain Source Resistance | 1.5 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 110 |
| Typical Turn-On Delay Time (ns) | 8.8 |
| Maximum Continuous Drain Current | 3.6 A |
| Maximum Drain Source Voltage (V) | 200 |
| Typical Gate Plateau Voltage (V) | 7.3 |
| Typical Turn-Off Delay Time (ns) | 7.3 |
| Maximum Diode Forward Voltage (V) | 6.3 |
| Rds On - Drain-Source Resistance: | 1.5 Ohms |
| Typical Gate to Drain Charge (nC) | 11(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 3.3(Max) |
| Typical Reverse Recovery Time (ns) | 150 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.6 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 340@25V |
| Typical Reverse Recovery Charge (nC) | 970 |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Maximum Drain Source Resistance (mOhm) | 1500@10V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 14 |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 33@25V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |