IRFR9110TRPBF, Транзистор силовой полевой D-PAK
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- Код товара
- 8017529823
- Артикул
- IRFR9110TRPBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Brand:
- Vishay Semiconductors
- Package
- Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Цена по запросу
(от 100,94 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
P-канал 100 В 3,1 А (Tc), 2,5 Вт (Ta), 25 Вт (Tc) для поверxностного монтажа D-Pak
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Brand: | Vishay Semiconductors |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Series: | IRFR/U |
| FET Type | P-Channel |
| Vgs (Max) | В±20V |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 1 |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Корпус | DPAK/TO-252AA |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 8.7 nC |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Base Product Number | IRFR9110 -> |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Power Dissipation (Pd) | 25W |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 1.9A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 25 W |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Supplier Device Package | D-Pak |
| Total Gate Charge (Qg@Vgs) | 8.7nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7nC @ 10V |
| Input Capacitance (Ciss@Vds) | 200pF |
| Continuous Drain Current (Id) | 2A |
| Drain to Source Voltage (Vdss) | 100V |
| Id - Continuous Drain Current: | 3.1 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance: | 1.2 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF@25V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Current - Continuous Drain (Id) @ 25В°C | 3.1A (Tc) |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Крутизна характеристики, S | 0.97 |
| Пороговое напряжение на затворе | 2V@250uA |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 25 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 1.2Ω@10V, 1.9A |