IRFR9024NTRLPBF, Транзистор P-MOSFET, полевой, -55В, -11А, 38Вт, DPAK
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- Код товара
- 8070127528
- Артикул
- IRFR9024NTRLPBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 37 ns
- Rise Time:
- 55 ns
- Вес, г
- 0.45
Цена по запросу
(от 99,38 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 37 ns |
| Rise Time: | 55 ns |
| Вес, г | 0.45 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | TO-252-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | IRFR9024NTRLPBF SP001557198 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 19 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 38 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 13 ns |
| Typical Turn-Off Delay Time: | 23 ns |
| Id - Continuous Drain Current: | 11 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 2.5 S |
| Rds On - Drain-Source Resistance: | 175 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |