IRFR9014PBF, MOSFETs TO252 P-CH 60V 5.1A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025463687
- Артикул
- IRFR9014PBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- No
- Brand:
- Vishay Semiconductors
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 96 ₽)
Минимальный заказ: 75 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-МОП, полевой, 60 В 5.1 А 2.5 Вт D-PAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant with Exemption |
| Series: | IRFR/U |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 31 ns |
| Packaging: | Tube |
| Rise Time: | 63 ns |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Вес, кг | 272 |
| Корпус | to252 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Package/Case: | TO-252-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Transistor Type: | 1 P-Channel |
| Maximum IDSS (uA) | 100 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 12 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity | P Channel; Continuous Drain Current Id |
| Transistor Polarity: | P-Channel |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 31 |
| Typical Rise Time (ns) | 63 |
| Особенности | - |
| Pd - Power Dissipation: | 25 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 11 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 9.6 ns |
| Id - Continuous Drain Current: | 5.1 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 12(Max) |
| Typical Gate Charge @ Vgs (nC) | 12(Max)10V |
| Forward Transconductance - Min: | 1.4 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 170 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Continuous Drain Current | 5.1 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 9.6 |
| Rds On - Drain-Source Resistance: | 500 mOhms |
| Typical Gate to Drain Charge (nC) | 5.1(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Typical Gate to Source Charge (nC) | 3.8(Max) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.1 |
| Typical Input Capacitance @ Vds (pF) | 270 25V |
| Typical Reverse Recovery Charge (nC) | 96 |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 500 10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Крутизна характеристики, S | 1.4 S |
| Пороговое напряжение на затворе | - |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 5.1 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | - |