IRFR430APBF, MOSFETs TO252 500V 5A N-CH MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025633779
- Артикул
- IRFR430APBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- Case
- DPAK, TO252
- PPAP
- No
- RoHS
- Details
Цена по запросу
(от 230,31 ₽)
Минимальный заказ: 75 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 500В, 3,2А, 110Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| Case | DPAK, TO252 |
| PPAP | No |
| RoHS | Details |
| Brand | Vishay Semiconductors |
| Width | 6.22 mm |
| Height | 2.39 mm |
| Length | 6.73 mm |
| Mounting | SMD |
| ECCN (US) | EAR99 |
| Fall Time | 16 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 27 ns |
| Automotive | No |
| Technology | Si |
| Вес, г | 8 |
| Gate charge | 24nC |
| PCB changed | 2 |
| Part Status | Active |
| Unit Weight | 0.050717 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Vishay |
| Polarisation | unipolar |
| Корпус | to252 |
| Configuration | Single |
| Drain current | 3.2A |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252AA-3 |
| Kind of channel | enhanced |
| Kind of package | tube |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 25 |
| Power dissipation | 110W |
| Number of Channels | 1 Channel |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±30V |
| On-state resistance | 1.7Ω |
| Transistor Polarity | N-Channel |
| Drain-source voltage | 500V |
| Factory Pack Quantity | 2000 |
| Standard Package Name | TO-252 |
| Pd - Power Dissipation | 110 W |
| Typical Fall Time (ns) | 16 |
| Typical Rise Time (ns) | 27 |
| Особенности | высоковольтный |
| Vgs - Gate-Source Voltage | 30 V |
| Typical Turn-On Delay Time | 8.7 ns |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 17 ns |
| Id - Continuous Drain Current | 5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Power Dissipation (mW) | 110000 |
| Typical Gate Charge @ 10V (nC) | 24(Max) |
| Typical Gate Charge @ Vgs (nC) | 24(Max)@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 8.7 |
| Maximum Drain Source Voltage (V) | 500 |
| Rds On - Drain-Source Resistance | 1.7 Ohms |
| Typical Turn-Off Delay Time (ns) | 17 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5 |
| Typical Input Capacitance @ Vds (pF) | 750@1V |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Maximum Drain Source Resistance (mOhm) | 1700@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Пороговое напряжение на затворе | - |
| Максимальное напряжение сток-исток Uси,В | 500 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 430 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 110 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |