IRFR1N60APBF, Транзистор: N-MOSFET, полевой, 600В, 0,89А, 36Вт, DPAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017543313
- Артикул
- IRFR1N60APBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- No
- RDS-on
- 7000@10V mOhm
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 277 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 600В, 0,89А, 36Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| RDS-on | 7000@10V mOhm |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 0.33 |
| Lead Finish | Matte Tin |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 25 |
| Typical Fall Time | 20 ns |
| Typical Rise Time | 14 ns |
| Max Processing Temp | 260I300 |
| Operating Temperature | -55 to 150 °C |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 14 |
| Typical Turn-On Delay Time | 9.8 ns |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 18 ns |
| Maximum Drain Source Voltage | 600 V |
| Maximum Power Dissipation (mW) | 36000 |
| Typical Gate Charge @ 10V (nC) | 14(Max) |
| Typical Gate Charge @ Vgs (nC) | 14(Max)10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 9.8 |
| Maximum Continuous Drain Current | 1.4 A |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 18 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.4 |
| Typical Input Capacitance @ Vds (pF) | 229 25V |
| Maximum Drain Source Resistance (MOhm) | 7000 10V |
| Maximum Gate Source Leakage Current (nA) | 100 |