IRFR024PBF, Транзистор: N-MOSFET, полевой, 60В, 9А, 42Вт, DPAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8034446040
- Артикул
- IRFR024PBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- Brand
- Vishay Semiconductors
Цена по запросу
(от 150 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Силовые МОП-транзисторы третьего поколения Vishay Semiconductor обеспечивают разработчику наилучшее сочетание быстрого переключения, надежной конструкции устройства, низкого сопротивления при включении и экономичности.
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| Brand | Vishay Semiconductors |
| Width | 6.22 mm |
| Height | 2.38 mm |
| Length | 6.73 mm |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | Si |
| Вес, г | 0.32 |
| PCB changed | 2 |
| Part Status | Active |
| Unit Weight | 0.050717 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Vishay |
| Package Type | DPAK(TO-252) |
| Корпус | DPAK/TO-252AA |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3 |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 25 |
| Process Technology | HEXFET |
| Структура | MOSFET |
| Factory Pack Quantity | 3000 |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 42 |
| Typical Rise Time (ns) | 58 |
| Особенности | Advanced Trench Technology |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60 V |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ 10V (nC) | 25(Max) |
| Typical Gate Charge @ Vgs (nC) | 25(Max)10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 360 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 6.1 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Maximum Diode Forward Voltage (V) | 1.5 |
| Typical Gate to Drain Charge (nC) | 11(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 5.8(Max) |
| Typical Reverse Recovery Time (ns) | 88 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 14 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 640 25V |
| Typical Reverse Recovery Charge (nC) | 290 |
| Maximum Drain Source Resistance (mOhm) | 100 10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 56 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 79 25V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 9 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 42 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |