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IRFP450PBF, Транзистор: N-MOSFET, полевой, 500В, 8,7А, 190Вт, TO247AC

IRFP450PBF, Транзистор: N-MOSFET, полевой, 500В, 8,7А, 190Вт, TO247AC

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Код товара
8017527928
Артикул
IRFP450PBF
Бренд
VISHAY INTERTECHNOLOGY INC.
HTS
8541.29.00.95
Tab
Tab
Brand:
Vishay Semiconductors
EU RoHS
Compliant with Exemption
Цена по запросу
(от 228,62 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор: N-MOSFET, полевой, 500В, 8,7А, 190Вт, TO247AC Характеристики Категория Транзистор Тип полевой Вид MOSFET

Технические параметры

HTS8541.29.00.95
TabTab
Brand:Vishay Semiconductors
EU RoHSCompliant with Exemption
Series:IRFP
VersionN channel
AssemblyTHT
MilitaryNo
MountingThrough Hole
ECCN (US)EAR99
EnclosureTO-247
Pin Count3
AutomotiveNo
Fall Time:44 ns
Lead ShapeThrough Hole
Packaging:Tube
Power loss190 W
Rise Time:47 ns
Вес, г4.79
PCB changed3
Part StatusNRND
Technology:Si
Channel ModeEnhancement
Channel TypeN
Max. current14 A
Subcategory:MOSFETs
max. Voltage500 V
Channel Mode:Enhancement
ConfigurationSingle
Manufacturer:Vishay
Package Width5.31(Max)
Product Type:MOSFET
Configuration:Single
Package Height20.7(Max)
Package Length15.87(Max)
Mounting Style:Through Hole
Package / Case:TO-247-3
Product CategoryPower MOSFET
Supplier PackageTO-247AC
Product Category:MOSFET
Qg - Gate Charge:150 nC
Number of Channels:1 Channel
Transistor PolarityN Channel; Continuous Drain Current Id
Transistor Polarity:N-Channel
Standard Package NameTO-247
Typical Fall Time (ns)44
Typical Rise Time (ns)47
Pd - Power Dissipation:190 W
Gate Charge Qg @10V (nC)1.5x10<sup>-7</sup> C
max. operating temperature150 °C
min. operating temperature-55 °C
Температура, С-55…+150
Number of Elements per Chip1
Typical Turn-On Delay Time:17 ns
Typical Turn-Off Delay Time:92 ns
Id - Continuous Drain Current:14 A
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)190000
Minimum Operating Temperature:-55 C
Typical Gate Charge @ 10V (nC)150(Max)
Typical Gate Charge @ Vgs (nC)150(Max)@10V
Forward Transconductance - Min:9.3 S
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)92
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)14
Typical Input Capacitance @ Vds (pF)2600@25V
Maximum Drain Source Resistance (mOhm)400@10V
Vgs th - Gate-Source Threshold Voltage:2 V
Factory Pack Quantity: Factory Pack Quantity:500
drain-source on resistance RDS (on) max @VGS=10V400 mΩ
Крутизна характеристики S,А/В9.3
Сопротивление канала в открытом состоянии Rси вкл.,мОм400
Максимальное пороговое напряжение затвор-исток Uзи макс.,В4

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