IRFP4227PBF, Транзистор: N-MOSFET, полевой, 200В, 65А, 330Вт, TO247AC
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070089253
- Артикул
- IRFP4227PBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 5.3mm
- Brand:
- Infineon Technologies
- Series
- HEXFET
- Pin Count
- 3
Цена по запросу
(от 395,09 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 200В, 65А, 330Вт, TO247AC Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Width | 5.3mm |
| Brand: | Infineon Technologies |
| Series | HEXFET |
| Pin Count | 3 |
| Fall Time: | 31 ns |
| Packaging: | Tube |
| Rise Time: | 20 ns |
| Вес, г | 5.8 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247AC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Part # Aliases: | IRFP4227PBF SP001560510 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 70 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 330 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 330 W |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 33 ns |
| Maximum Drain Source Voltage | 200 V |
| Typical Turn-Off Delay Time: | 21 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |
| Id - Continuous Drain Current: | 65 A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -40 C |
| Forward Transconductance - Min: | 49 S |
| Maximum Drain Source Resistance | 25 mΩ |
| Maximum Continuous Drain Current | 65 A |
| Rds On - Drain-Source Resistance: | 25 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
| Factory Pack Quantity: Factory Pack Quantity: | 400 |