Транзистор, IRFP2907PBF
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8057780142
- Артикул
- IRFP2907PBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- Type:
- Automotive MOSFET
- Width
- 5.3mm
Цена по запросу
(от 700 ₽)
Минимальный заказ: 4 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 75В, 209А, 330Вт, TO247AC Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type: | Automotive MOSFET |
| Width | 5.3mm |
| Brand: | Infineon Technologies |
| Series | HEXFET |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 130 ns |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Rise Time: | 190 ns |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247AC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Product Category | Power MOSFET |
| Supplier Package | TO-247AC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 410 nC |
| Process Technology | HEXFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-247 |
| Typical Fall Time (ns) | 130 |
| Typical Rise Time (ns) | 190 |
| Особенности | электропривод |
| Pd - Power Dissipation: | 330 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 470 W |
| Typical Gate Charge @ Vgs | 410 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 23 ns |
| Maximum Drain Source Voltage | 75 V |
| Typical Turn-Off Delay Time: | 130 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 209 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 470000 |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 410 |
| Typical Gate Charge @ Vgs (nC) | 410 10V |
| Maximum Drain Source Resistance | 5 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 23 |
| Maximum Continuous Drain Current | 209 A |
| Maximum Drain Source Voltage (V) | 75 |
| Typical Turn-Off Delay Time (ns) | 130 |
| Rds On - Drain-Source Resistance: | 4.5 mOhms |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 209 |
| Typical Input Capacitance @ Vds (pF) | 13000 25V |
| Vds - Drain-Source Breakdown Voltage: | 75 V |
| Maximum Drain Source Resistance (mOhm) | 4.5 10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
| Factory Pack Quantity: Factory Pack Quantity: | 400 |
| Крутизна характеристики, S | 160 |
| Транспортная упаковка: размер/кол-во | 60*40*40/500 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |