IRFP264PBF, Транзистор: N-MOSFET, полевой, 250В, 24А, 280Вт, TO247AC
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017528184
- Артикул
- IRFP264PBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- 8541.10.00.80
- Tab
- Tab
- Width
- 5.31mm
- Brand:
- Vishay Semiconductors
Цена по запросу
(от 344,77 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 250В, 24А, 280Вт, TO247AC Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| HTS | 8541.10.00.80 |
| Tab | Tab |
| Width | 5.31mm |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant |
| Series: | IRFP |
| Version | N channel |
| Assembly | THT |
| Military | No |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Enclosure | TO-247 |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 92 ns |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Power loss | 280 W |
| Rise Time: | 99 ns |
| Вес, г | 4.58 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Max. current | 38 A |
| Package Type | TO-247AC |
| Subcategory: | MOSFETs |
| max. Voltage | 250 V |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Vishay |
| Mounting Type | Through Hole |
| Package Width | 5.31(Max) |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package Height | 20.82(Max) |
| Package Length | 15.87(Max) |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Product Category | Power MOSFET |
| Supplier Package | TO-247AC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 210 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-247 |
| Typical Fall Time (ns) | 92 |
| Typical Rise Time (ns) | 99 |
| Pd - Power Dissipation: | 280 W |
| Gate Charge Qg @10V (nC) | 2.1x10<sup>-7</sup> C |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 280 W |
| Typical Gate Charge @ Vgs | 210 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| max. operating temperature | 150 °C |
| min. operating temperature | -55 °C |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 22 ns |
| Maximum Drain Source Voltage | 250 V |
| Typical Turn-Off Delay Time: | 110 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 38 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 280000 |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 210(Max) |
| Typical Gate Charge @ Vgs (nC) | 210(Max)@10V |
| Forward Transconductance - Min: | 20 S |
| Maximum Drain Source Resistance | 75 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 22 |
| Maximum Continuous Drain Current | 38 A |
| Maximum Drain Source Voltage (V) | 250 |
| Typical Turn-Off Delay Time (ns) | 110 |
| Rds On - Drain-Source Resistance: | 75 mOhms |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 38 |
| Typical Input Capacitance @ Vds (pF) | 5400@25V |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Maximum Drain Source Resistance (mOhm) | 75@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| drain-source on resistance RDS (on) max @VGS=10V | 75 mΩ |