Транзистор IRFP150NPBF
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8075253013
- Артикул
- IRFP150NPBF
- Бренд
- International Rectifier
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Mounting
- Through Hole
Цена по запросу
(от 120 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 100V 42A с 3-контактным разъемом (3+ язычка) для подключения к 247AC
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Mounting | Through Hole |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 5.31(Max) |
| Package Length | 15.87(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-247AC |
| Maximum IDSS (uA) | 25 |
| Process Technology | HEXFET |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 40 |
| Typical Rise Time (ns) | 56 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 160000 |
| Typical Gate Charge @ 10V (nC) | 110(Max) |
| Typical Gate Charge @ Vgs (nC) | 110(Max)@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 450 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Drain-Source Voltage (V) | 100 |
| Typical Gate Plateau Voltage (V) | 5.8 |
| Typical Turn-Off Delay Time (ns) | 45 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Typical Gate to Drain Charge (nC) | 58(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 15(Max) |
| Typical Reverse Recovery Time (ns) | 180 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 42 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 1900@25V |
| Typical Reverse Recovery Charge (nC) | 1200 |
| Maximum Drain-Source Resistance (mOhm) | 36@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 140 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 230@25V |