IRFI9520GPBF, MOSFETs TO220 100V 5.2A P-CH MOSFET
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- Код товара
- 8004650041
- Артикул
- IRFI9520GPBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- No
- Brand:
- Vishay Semiconductors
- EU RoHS
- Compliant
Цена по запросу
(от 269,63 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 100V 5.2A с 3-контактным разъемом (3+Tab) TO-220FP
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant |
| Series: | IRFI |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Вес, г | 35 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Subcategory: | MOSFETs |
| Корпус | to220 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Vishay |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category | Power MOSFET |
| Supplier Package | TO-220FP |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 18 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Standard Package Name | TO-220 |
| Typical Fall Time (ns) | 25 |
| Typical Rise Time (ns) | 29 |
| Особенности | - |
| Pd - Power Dissipation: | 37 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Id - Continuous Drain Current: | 5.2 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 37000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 18(Max) |
| Typical Gate Charge @ Vgs (nC) | 18(Max)10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 9.6 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 21 |
| Rds On - Drain-Source Resistance: | 600 mOhms |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.2 |
| Typical Input Capacitance @ Vds (pF) | 390 25V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Maximum Drain Source Resistance (mOhm) | 600 10V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | 900mV@250uA |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 5.2 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |