IRFH8201TRPBF, MOSFETs MOSFET N-CH 25V 100A PQFN
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005402002
- Артикул
- IRFH8201TRPBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- No
- EU RoHS
- Compliant with Exemption
- FET Type
- N-Channel
- Mounting
- Surface Mount
Цена по запросу
(от 161,37 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 25V 49A 8-контактный PQFN EP T/R
Технические параметры
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| FET Type | N-Channel |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Vgs (Max) | ±20V |
| Automotive | No |
| Lead Shape | No Lead |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Product Category | Power MOSFET |
| Supplier Package | PQFN EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | HEXFET |
| Vgs(th) (Max) @ Id | 2.35V @ 150µA |
| Структура | N-Channel |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Standard Package Name | QFN |
| Rds On (Max) @ Id, Vgs | 0.95mOhm @ 50A, 10V |
| Typical Fall Time (ns) | 22 |
| Typical Rise Time (ns) | 54 |
| Особенности | - |
| Power Dissipation (Max) | 3.6W(Ta), 156W(Tc) |
| Supplier Device Package | 8-PQFN(5x6) |
| Typical Switch Charge (nC) | 25 |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 25 V |
| Maximum Power Dissipation (mW) | 3600 |
| Typical Gate Charge @ 10V (nC) | 111 |
| Typical Gate Charge @ Vgs (nC) | 56@4.5V|111@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 1730 |
| Typical Turn-On Delay Time (ns) | 27 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Gate Plateau Voltage (V) | 2.9 |
| Typical Turn-Off Delay Time (ns) | 31 |
| Maximum Diode Forward Voltage (V) | 1 |
| Typical Gate to Drain Charge (nC) | 18 |
| Maximum Gate Threshold Voltage (V) | 2.35 |
| Minimum Gate Threshold Voltage (V) | 1.35 |
| Typical Gate Threshold Voltage (V) | 1.8 |
| Typical Gate to Source Charge (nC) | 16 |
| Typical Reverse Recovery Time (ns) | 25 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 7330 pF @ 13 V |
| Maximum Continuous Drain Current (A) | 49 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 7330@13V |
| Typical Reverse Recovery Charge (nC) | 57 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Maximum Drain Source Resistance (mOhm) | 0.95@10V |
| Current - Continuous Drain (Id) @ 25°C | 49A(Ta), 100A(Tc) |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 700 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 156 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 850@13V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 35 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 25 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 100 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |