IRFH5110TRPBF, Транзистор N-МОП, полевой, HEXFET, 100В, 11А, 3,6Вт, PQFN5X6
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- Код товара
- 8074094621
- Артикул
- IRFH5110TRPBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 6.4 ns
- Rise Time:
- 9.6 ns
- Вес, г
- 0.43
Цена по запросу
(от 320 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 6.4 ns |
| Rise Time: | 9.6 ns |
| Вес, г | 0.43 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | PQFN-8 |
| Part # Aliases: | IRFH5110TRPBF SP001560340 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 48 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 114 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 7.8 ns |
| Typical Turn-Off Delay Time: | 22 ns |
| Id - Continuous Drain Current: | 63 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 12.4 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |