IRFBE20PBF, Транзистор: N-MOSFET, полевой, 800В, 1,8А, Idm: 7,2А, 54Вт, TO220AB
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070170321
- Артикул
- IRFBE20PBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- 8541.29.00.95
- Tab
- Tab
- Width
- 4.7mm
- EU RoHS
- Compliant
Цена по запросу
(от 169,29 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 800В, 1,8А, Idm: 7,2А, 54Вт, TO220AB Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| Width | 4.7mm |
| EU RoHS | Compliant |
| Military | No |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 1.96 |
| Серия | IRFBE |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220AB |
| Configuration | Single |
| Mounting Type | Through Hole |
| Package Width | 4.7(Max) |
| Package Height | 9.01(Max) |
| Package Length | 10.41(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Упаковка | Tube |
| Process Technology | HEXFET |
| Transistor Material | Si |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Технология | Si |
| Standard Package Name | TO-220 |
| Typical Fall Time (ns) | 27 |
| Typical Rise Time (ns) | 17 |
| Тип продукта | MOSFET |
| Transistor Configuration | Single |
| Подкатегория | MOSFETs |
| Maximum Power Dissipation | 54 W |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Торговая марка | Vishay / Siliconix |
| Maximum Drain Source Voltage | 800 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 54000 |
| Minimum Gate Threshold Voltage | 2V |
| Typical Gate Charge @ 10V (nC) | 38(Max) |
| Typical Gate Charge @ Vgs (nC) | 38(Max)@10V |
| Maximum Drain Source Resistance | 6.5 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 8.2 |
| Maximum Continuous Drain Current | 1.8 A |
| Maximum Drain Source Voltage (V) | 800 |
| Typical Turn-Off Delay Time (ns) | 58 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Категория продукта | МОП-транзистор |
| Maximum Continuous Drain Current (A) | 1.8 |
| Typical Input Capacitance @ Vds (pF) | 530@25V |
| Maximum Drain Source Resistance (mOhm) | 6500@10V |
| Размер фабричной упаковки | 50 |