IRFB7437PBF, Транзистор N-МОП, полевой, 40В, 250А, 230Вт, TO220AB
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- Код товара
- 8017538962
- Артикул
- IRFB7437PBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- Q(g)
- 150 nC
- V(DS)
- 40 V
Цена по запросу
(от 102,78 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 40В, 250А, 230Вт, TO220AB
Технические параметры
| Tab | Tab |
| PPAP | No |
| Q(g) | 150 nC |
| V(DS) | 40 V |
| P(tot) | 230 W |
| EU RoHS | Compliant with Exemption |
| Package | TO-220 |
| R(thJC) | 0.65 K/W |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Technology | StrongFET |
| Вес, г | 1.92 |
| Logic level | NO |
| PCB changed | 3 |
| Part Status | Active |
| RoHS Status | RoHS-conform |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| RDS(on)at 10V | 2 mOhm |
| Fast bodydiode | NO |
| RoHS Compliant | Yes |
| I(D)at Tc=25°C | 195 A |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Maximum IDSS (uA) | 1 |
| Process Technology | HEXFET |
| Transistor Polarity | N Channel |
| Standard Package Name | TO-220 |
| Typical Fall Time (ns) | 53 |
| Typical Rise Time (ns) | 70 |
| Vgs - Gate-Source Voltage | 3.9V @ 150uA |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 230000 |
| Typical Gate Charge @ 10V (nC) | 150 |
| Typical Gate Charge @ Vgs (nC) | 150 10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 19 |
| Maximum Drain Source Voltage (V) | 40 |
| Rds On - Drain-Source Resistance | 2mО© @ 100A,10V |
| Typical Turn-Off Delay Time (ns) | 78 |
| Maximum Gate Threshold Voltage (V) | 3.9 |
| Power Dissipation-Max (Ta=25В°C) | 230W(Tc) |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 250 |
| Typical Input Capacitance @ Vds (pF) | 7330 25V |
| Vds - Drain-Source Breakdown Voltage | 40V |
| Maximum Drain Source Resistance (mOhm) | 2 10V |
| Continuous Drain Current (Id) @ 25В°C | 195A(Tc) |
| Maximum Gate Source Leakage Current (nA) | 100 |