Type N-Channel MOSFET, 88 A, 100 V TO-263 IRFB4410PBF
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- Код товара
- 8057891574
- Артикул
- IRFB4410PBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- Width
- 4.82mm
- Brand:
- Infineon Technologies
Цена по запросу
(от 310 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 100V 88A с 3-контактным разъемом (3+Tab) для трубки TO-220AB
Технические параметры
| Tab | Tab |
| PPAP | No |
| Width | 4.82mm |
| Brand: | Infineon Technologies |
| Series | HEXFET |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220AB |
| Subcategory: | MOSFETs |
| Корпус | TO-263 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| RoHS Compliant | Yes |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 120 nC |
| Process Technology | HEXFET |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-220 |
| Typical Fall Time (ns) | 50 |
| Typical Rise Time (ns) | 80 |
| Особенности | - |
| Pd - Power Dissipation: | 250 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 230 W |
| Typical Gate Charge @ Vgs | 83 nC @ 10 V |
| Vgs - Gate-Source Voltage | 4V @ 150uA |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Температура, С | -55…+175 |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 96 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 200000 |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 120 |
| Typical Gate Charge @ Vgs (nC) | 120 10V |
| Maximum Drain Source Resistance | 9 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 24 |
| Maximum Continuous Drain Current | 97 A |
| Maximum Drain Source Voltage (V) | 100 |
| Rds On - Drain-Source Resistance | 9mО© @ 58A,10V |
| Typical Turn-Off Delay Time (ns) | 55 |
| Rds On - Drain-Source Resistance: | 8 mOhms |
| Power Dissipation-Max (Ta=25В°C) | 230W |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 88 |
| Typical Input Capacitance @ Vds (pF) | 5150 50V |
| Vds - Drain-Source Breakdown Voltage | 100V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Maximum Drain Source Resistance (MOhm) | 10 10V |
| Continuous Drain Current (Id) @ 25В°C | 97A |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Крутизна характеристики S,А/В | 140 |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 88 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 250 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл.,мОм | 9 |
| Максимальное пороговое напряжение затвор-исток Uзи макс.,В | 4 |