IRFB4321PBF, Транзистор: N-MOSFET, полевой, 150В, 83А, 330Вт, TO220AB

Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8061940868
- Артикул
- IRFB4321PBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 4.82mm
- Series
- HEXFET
- Military
- No
- Packaging
- Tube
Цена по запросу
(от 435,81 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает широкий ассортимент надежныx N-канальныx и P-канальныx МОП-транзисторныx устройств для управления двигателями.
Технические параметры
| Width | 4.82mm |
| Series | HEXFET |
| Military | No |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 1.97 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Supplier Package | TO-220AB |
| Process Technology | HEXFET |
| Transistor Material | Si |
| Standard Package Name | TO-220 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 350 W |
| Typical Gate Charge @ Vgs | 71 nC @ 10 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 150 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Operating Temperature - (??C) | -55~175 |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 15 mΩ |
| Maximum Continuous Drain Current | 85 A |
| Maximum Power Dissipation - (mW) | 350000 |
| Typical Gate Charge @ 10V - (nC) | 71 |
| Typical Gate Charge @ Vgs - (nC) | 71@10V |
| Maximum Gate Source Voltage - (V) | ??30 |
| Maximum Drain Source Voltage - (V) | 150 |
| Maximum Continuous Drain Current - (A) | 85 |
| Typical Input Capacitance @ Vds - (pF) | 4460@25V |
| Maximum Drain Source Resistance - (mOhm) | 15@10V |