IRFB4228PBF, Trans MOSFET N-CH 150V 83A 3-Pin(3+Tab) TO-220AB Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002238993
- Артикул
- IRFB4228PBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- Series
- HEXFET
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 905 ₽)
Минимальный заказ: 31 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 150V 83A с 3-контактным разъемом (3+ Tab) для трубки TO-220AB
Технические параметры
| Tab | Tab |
| PPAP | No |
| Series | HEXFET |
| EU RoHS | Compliant with Exemption |
| FET Type | N-Channel |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Vgs (Max) | В±30V |
| Automotive | No |
| Lead Shape | Through Hole |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon Technologies |
| Package Type | TO-220AB |
| Корпус | TO-220AB |
| Configuration | Single |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Category | Power MOSFET |
| Standard Package | 50 |
| Supplier Package | TO-220AB |
| Process Technology | HEXFET |
| Vgs(th) (Max) @ Id | 5V @ 250ВµA |
| Структура | N-Channel |
| Transistor Material | Si |
| Operating Temperature | -40В°C ~ 175В°C(TJ) |
| Standard Package Name | TO-220 |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 33A, 10V |
| Особенности | - |
| Power Dissipation (Max) | 330W(Tc) |
| Supplier Device Package | TO-220AB |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 330 W |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V |
| Maximum Drain Source Voltage | 150 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |
| Drain to Source Voltage (Vdss) | 150V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation (mW) | 330000 |
| Minimum Gate Threshold Voltage | 3V |
| Typical Gate Charge @ 10V (nC) | 72 |
| Typical Gate Charge @ Vgs (nC) | 72 10V |
| Maximum Drain Source Resistance | 15 mΩ |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Continuous Drain Current | 83 A |
| Maximum Drain Source Voltage (V) | 150 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -40 |
| Input Capacitance (Ciss) (Max) @ Vds | 4530pF @ 25V |
| Maximum Continuous Drain Current (A) | 83 |
| Typical Input Capacitance @ Vds (pF) | 4530 25V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Maximum Drain Source Resistance (MOhm) | 15 10V |
| Current - Continuous Drain (Id) @ 25В°C | 83A(Tc) |
| Крутизна характеристики, S | 170 |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 150 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 83 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 330 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±30В |