IRFB3607PBF, Транзистор, N-канал 75В 80А [TO-220AB]
![IRFB3607PBF, Транзистор, N-канал 75В 80А [TO-220AB]](https://static.epl-electro.ru/lib/413/DOC005413066.jpg)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017538946
- Артикул
- IRFB3607PBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- Width
- 4.82mm
- Series
- HEXFET
Цена по запросу
(от 58,24 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает широкий ассортимент надежныx N-канальныx и P-канальныx МОП-транзисторныx устройств для управления двигателями.
Технические параметры
| Tab | Tab |
| PPAP | No |
| Width | 4.82mm |
| Series | HEXFET |
| EU RoHS | Compliant with Exemption |
| Version | N channel |
| Assembly | THT |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Enclosure | TO-220 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Power loss | 140 W |
| Вес, г | 1.97 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Max. current | 80 A |
| Package Type | TO-220AB |
| max. Voltage | 75 V |
| Configuration | Single |
| Mounting Type | Through Hole |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Process Technology | HEXFET |
| Transistor Material | Si |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Standard Package Name | TO-220 |
| Typical Fall Time (ns) | 96 |
| Typical Rise Time (ns) | 110 |
| Gate Charge Qg @10V (nC) | 5.6x10<sup>-8</sup> C |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 140 W |
| Typical Gate Charge @ Vgs | 56 nC @ 10 V |
| max. operating temperature | 175 °C |
| min. operating temperature | -55 °C |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 75 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation (mW) | 140000 |
| Minimum Gate Threshold Voltage | 2V |
| Typical Gate Charge @ 10V (nC) | 56 |
| Typical Gate Charge @ Vgs (nC) | 56 10V |
| Maximum Drain Source Resistance | 9 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 16 |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage (V) | 75 |
| Typical Turn-Off Delay Time (ns) | 43 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 80 |
| Typical Input Capacitance @ Vds (pF) | 3070 50V |
| Maximum Drain Source Resistance (MOhm) | 9 10V |
| drain-source on resistance RDS (on) max @VGS=10V | 9 mΩ |