IRFB3006PBF, Транзистор: N-MOSFET, полевой, 60В, 270А, 375Вт, TO220AB

Name: IRFB3006PBF, Транзистор: N-MOSFET, полевой, 60В, 270А, 375Вт, TO220AB
Brand: INFINEON TECHNOLOGIES AG.
SKU: 8061918598

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Цена по запросу

(от 352,29 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор: N-MOSFET, полевой, 60В, 270А, 375Вт, TO220AB Характеристики Категория Транзистор Тип полевой Вид MOSFET

ECCN	EAR99
HTSUS	8541.29.0095
Width	4.83mm
Series	HEXFETВ® ->
Package	Tube
FET Type	N-Channel
Pin Count	3
Vgs (Max)	В±20V
Technology	MOSFET (Metal Oxide)
Вес, г	2.01
RoHS Status	ROHS3 Compliant
Channel Mode	Enhancement
Channel Type	N
Package Type	TO-220AB
REACH Status	REACH Unaffected
Mounting Type	Through Hole
Package / Case	TO-220-3
RoHS Compliant	Yes
Vgs(th) (Max) @ Id	4V @ 250ВµA
Base Product Number	IRFB3006 ->
Transistor Material	Si
Operating Temperature	-55В°C ~ 175В°C (TJ)
Rds On (Max) @ Id, Vgs	2.5mOhm @ 170A, 10V
Power Dissipation (Max)	375W (Tc)
Supplier Device Package	TO-220AB
Transistor Configuration	Single
Maximum Power Dissipation	375 W
Typical Gate Charge @ Vgs	200 nC @ 10 V
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Gate Charge (Qg) (Max) @ Vgs	300nC @ 10V
Maximum Drain Source Voltage	60 V
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Drain to Source Voltage (Vdss)	60V
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Drain Source Resistance	3 mΩ
Maximum Continuous Drain Current	270 A
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds	8970pF @ 50V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25В°C	195A (Tc)