IRF9Z34PBF-BE3, MOSFETs TO220 P-CH 60V 18A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070123875
- Артикул
- IRF9Z34PBF-BE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- No
- Brand:
- Vishay/Siliconix
- Mounting
- Through Hole
Цена по запросу
(от 299 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 60V 18A 3-контактный (3+Tab) TO-220AB
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | Vishay/Siliconix |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 58 ns |
| Packaging: | Tube |
| Rise Time: | 120 ns |
| Вес, г | 1.95 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Vishay |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Part # Aliases: | IRF9Z34PBF |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 34 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Standard Package Name | TO-220 |
| Factory Pack Quantity: | 1000 |
| Typical Fall Time (ns) | 58 |
| Typical Rise Time (ns) | 120 |
| Pd - Power Dissipation: | 88 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 18 ns |
| Typical Turn-Off Delay Time: | 20 ns |
| Id - Continuous Drain Current: | 18 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 88000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 34(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 18 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Rds On - Drain-Source Resistance: | 140 mOhms |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 18 |
| Typical Input Capacitance @ Vds (pF) | 1100@25V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 140@10V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |