IRF9Z24NPBF, Транзистор: P-MOSFET, полевой, -55В, -12А, 45Вт, TO220AB
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- Код товара
- 8070053914
- Артикул
- IRF9Z24NPBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Q(g)
- 12.7 nC
- Type
- Power MOSFET
- V(DS)
- 55 V
- Series
- HEXFET
Цена по запросу
(от 120,28 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: P-MOSFET, полевой, -55В, -12А, 45Вт, TO220AB Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Q(g) | 12.7 nC |
| Type | Power MOSFET |
| V(DS) | 55 V |
| Series | HEXFET |
| Package | TO-220 |
| Mounting | Through Hole |
| Polarity | P |
| Packaging | Rail/Tube |
| Pin Count | 3 |
| Automotive | NO |
| Вес, г | 1.95 |
| RoHS Status | RoHS-conform |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | TO-220AB |
| Rad Hardened | No |
| Configuration | P-CH |
| Mounting Type | Through Hole |
| RDS(on)at 10V | 175 mOhm |
| Fast bodydiode | NO |
| I(D)at Tc=25°C | 12 A |
| Power Dissipation | 45(W) |
| Number of Elements | 1 |
| Transistor Material | Si |
| Drain-Source On-Volt | 55(V) |
| Operating Temp Range | -55C to 175C |
| Continuous Drain Current | 12(A) |
| Transistor Configuration | Single |
| Gate-Source Voltage (Max) | ±20(V) |
| Maximum Power Dissipation | 45 W |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 55 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 175 mΩ |
| кол-во в упаковке | 50 |
| Maximum Continuous Drain Current | 12 A |
| Operating Temperature Classification | Military |