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IRF9620PBF, Транзистор: P-MOSFET, полевой, -200В, -2А, 40Вт, TO220AB

IRF9620PBF, Транзистор: P-MOSFET, полевой, -200В, -2А, 40Вт, TO220AB

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Код товара
8017527905
Артикул
IRF9620PBF
Бренд
VISHAY INTERTECHNOLOGY INC.
HTS
8541.29.00.95
Tab
Tab
Width
4.7mm
EU RoHS
Compliant
Цена по запросу
(от 116,22 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор: P-MOSFET, полевой, -200В, -2А, 40Вт, TO220AB Характеристики Категория Транзистор Тип полевой Вид MOSFET

Технические параметры

HTS8541.29.00.95
TabTab
Width4.7mm
EU RoHSCompliant
MilitaryNo
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
Вес, г1.95
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
Package TypeTO-220AB
ConfigurationSingle
Mounting TypeThrough Hole
Package Width4.7(Max)
Package Height9.01(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)100
Process TechnologyHEXFET
Transistor MaterialSi
Standard Package NameTO-220
Typical Fall Time (ns)15
Typical Rise Time (ns)25
Transistor ConfigurationSingle
Maximum Power Dissipation40 W
Typical Gate Charge @ Vgs22 nC @ 10 V
Maximum Gate Source Voltage-20 V, +20 V
Number of Elements per Chip1
Maximum Drain Source Voltage200 V
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-55 °C
Maximum Power Dissipation (mW)40000
Minimum Gate Threshold Voltage2V
Typical Gate Charge @ 10V (nC)22(Max)
Typical Gate Charge @ Vgs (nC)22(Max)@10V
Maximum Drain Source Resistance1.5 Ω
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Continuous Drain Current3.5 A
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)20
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.5
Typical Input Capacitance @ Vds (pF)350@25V
Maximum Drain Source Resistance (mOhm)1500@10V
Maximum Gate Source Leakage Current (nA)100

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