IRF8915TRPBF, Trans MOSFET N-CH 20V 8.9A 8-Pin SOIC N T/R
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- Код товара
- 8048070388
- Артикул
- IRF8915TRPBF
- Бренд
- International Rectifier
- PPAP
- No
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
- Pin Count
- 8
Цена по запросу
(от 110 ₽)
Минимальный заказ: 786 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 20V 8.9A с 8-контактным разъемом SOIC N T/R
Технические параметры
| PPAP | No |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Dual Drain |
| Package Width | 4(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Maximum IDSS (uA) | 1 |
| Process Technology | HEXFET |
| Структура | N-Channel |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 3.6 |
| Typical Rise Time (ns) | 12 |
| Особенности | - |
| Typical Switch Charge (nC) | 2.3 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ Vgs (nC) | 4.9@4.5V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 180 |
| Typical Turn-On Delay Time (ns) | 6 |
| Maximum Drain-Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 3.6 |
| Typical Turn-Off Delay Time (ns) | 7.1 |
| Maximum Diode Forward Voltage (V) | 1 |
| Typical Gate to Drain Charge (nC) | 1.7 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Minimum Gate Threshold Voltage (V) | 1.7 |
| Typical Gate to Source Charge (nC) | 1.8 |
| Typical Reverse Recovery Time (ns) | 13 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 8.9 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 540@10V |
| Typical Reverse Recovery Charge (nC) | 3.5 |
| Maximum Drain-Source Resistance (mOhm) | 18.3@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 71 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 14.6@10V|21.6@4.5V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 91@10V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 62.5 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 8.9 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |