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IRF8910TRPBFXTMA1, Trans MOSFET N-CH 20V 10A 8-Pin SOIC N T/R

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Код товара
8039083264
Артикул
IRF8910TRPBFXTMA1
Бренд
INFINEON TECHNOLOGIES AG.
PPAP
No
Category
Power MOSFET
Mounting
Surface Mount
Packaging
Tape and Reel
Цена по запросу
(от 130 ₽)
Минимальный заказ: 697 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Транзисторный MOSFET N-CH 20V 10A 8-контактный SOIC N T/R

Технические параметры

PPAPNo
CategoryPower MOSFET
MountingSurface Mount
PackagingTape and Reel
Pin Count8
AutomotiveNo
Вес, г1
PCB changed8
Part StatusObsolete
ConfigurationDual Dual Drain
Package Width3.9
Package Length4.9
Supplier PackageSOIC N
Maximum IDSS (uA)1
СтруктураN
Standard Package NameSO
Typical Fall Time (ns)4.1
Typical Rise Time (ns)10
Typical Switch Charge (nC)3.3
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)7.4@4.5V
Maximum Gate-Source Voltage (V)±20
Typical Output Capacitance (pF)300
Typical Turn-On Delay Time (ns)6.2
Maximum Drain-Source Voltage (V)20
Typical Gate Plateau Voltage (V)3.3
Typical Turn-Off Delay Time (ns)9.7
Maximum Diode Forward Voltage (V)1
Typical Gate to Drain Charge (nC)2.5
Maximum Gate Threshold Voltage (V)2.55
Minimum Gate Threshold Voltage (V)1.65
Typical Gate to Source Charge (nC)2.4
Typical Reverse Recovery Time (ns)17
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)960@10V
Typical Reverse Recovery Charge (nC)6.5
Maximum Drain-Source Resistance (mOhm)13.4@10V
Maximum Gate-Source Leakage Current (nA)100
Maximum Positive Gate-Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)82
Typical Drain-Source Resistance @ 25°C (mOhm)10.7@10V, 14.6@4.5V
Typical Reverse Transfer Capacitance @ Vds (pF)16@10V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)62.5
Максимальный ток сток-исток при 25 С Iси макс..А10

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