IRF8910TRPBFXTMA1, Trans MOSFET N-CH 20V 10A 8-Pin SOIC N T/R

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- Код товара
- 8039083264
- Артикул
- IRF8910TRPBFXTMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- No
- Category
- Power MOSFET
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
Цена по запросу
(от 130 ₽)
Минимальный заказ: 697 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET N-CH 20V 10A 8-контактный SOIC N T/R
Технические параметры
| PPAP | No |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Obsolete |
| Configuration | Dual Dual Drain |
| Package Width | 3.9 |
| Package Length | 4.9 |
| Supplier Package | SOIC N |
| Maximum IDSS (uA) | 1 |
| Структура | N |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 4.1 |
| Typical Rise Time (ns) | 10 |
| Typical Switch Charge (nC) | 3.3 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ Vgs (nC) | 7.4@4.5V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 300 |
| Typical Turn-On Delay Time (ns) | 6.2 |
| Maximum Drain-Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 3.3 |
| Typical Turn-Off Delay Time (ns) | 9.7 |
| Maximum Diode Forward Voltage (V) | 1 |
| Typical Gate to Drain Charge (nC) | 2.5 |
| Maximum Gate Threshold Voltage (V) | 2.55 |
| Minimum Gate Threshold Voltage (V) | 1.65 |
| Typical Gate to Source Charge (nC) | 2.4 |
| Typical Reverse Recovery Time (ns) | 17 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 960@10V |
| Typical Reverse Recovery Charge (nC) | 6.5 |
| Maximum Drain-Source Resistance (mOhm) | 13.4@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 82 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 10.7@10V, 14.6@4.5V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 16@10V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 62.5 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 10 |