IRF8714TRPBFXTMA1,Power MOSFET, N Channel, 30 V, 14 A, 0.0071 ohm, SO-8, Surface Mount
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- Код товара
- 8046434404
- Артикул
- IRF8714TRPBFXTMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- No
- Material
- Si
- Mounting
- Surface Mount
- Pin Count
- 8
Цена по запросу
(от 229 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный МОП-транзистор N-CH Si 30V 14A с 8-контактным разъемом SO T/R
Технические параметры
| PPAP | No |
| Material | Si |
| Mounting | Surface Mount |
| Pin Count | 8 |
| Automotive | No |
| Вес, г | 0.136 |
| No. of Pins | 8Pins |
| PCB changed | 8 |
| Part Status | Unconfirmed |
| Channel Type | N Channel |
| Корпус | SO-8 |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 4(Max)mm |
| Product Range | HEXFET Series |
| Package Length | 5(Max)mm |
| Product Category | Power MOSFET |
| Supplier Package | SO |
| Maximum IDSS (uA) | 1 |
| Process Technology | HEXFET |
| Структура | N-Channel |
| Transistor Mounting | Surface Mount |
| Standard Package Name | SO |
| Transistor Case Style | SO-8 |
| Typical Fall Time (ns) | 5 |
| Typical Rise Time (ns) | 9.9 |
| Особенности | - |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Typical Switch Charge (nC) | 4 |
| Continuous Drain Current Id | 14A |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 2.6 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ Vgs (nC) | 8.1@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 220 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 11 |
| Gate Source Threshold Voltage Max | 2.35V |
| Maximum Diode Forward Voltage (V) | 1 |
| Typical Gate to Drain Charge (nC) | 3 |
| Maximum Gate Threshold Voltage (V) | 2.35 |
| Minimum Gate Threshold Voltage (V) | 1.35 |
| Typical Gate Threshold Voltage (V) | 1.8 |
| Typical Gate to Source Charge (nC) | 1.9 |
| Typical Reverse Recovery Time (ns) | 14 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1020@15V |
| Typical Reverse Recovery Charge (nC) | 15 |
| Maximum Drain Source Resistance (MOhm) | 8.7@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 110 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 110@15V |
| Пороговое напряжение на затворе | - |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 14 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2.5W |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.0071 Ом |