Моя заявка (0)
IRF820 TO-220AB

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8075229571
Артикул
IRF820
Бренд
VISHAY INTERTECHNOLOGY INC.
HTS
8541.10.00.80
Tab
Tab
Width
4.7mm
EU RoHS
Compliant
Цена по запросу
(от 140 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор N-MOSFET, полевой, 500В, 1,6А, 50Вт, TO220AB

Технические параметры

HTS8541.10.00.80
TabTab
Width4.7mm
EU RoHSCompliant
VersionN channel
AssemblyTHT
MilitaryNo
MountingThrough Hole
ECCN (US)EAR99
EnclosureTO-220
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
Power loss50 W
Вес, г1
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Max. current2.5 A
Package TypeTO-220AB
max. Voltage500 V
ConfigurationSingle
Mounting TypeThrough Hole
Package Width4.7(Max)
Package Height9.01(Max)
Package Length10.41(Max)
RoHS CompliantYes
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Process TechnologyTrenchFET
Transistor MaterialSi
Standard Package NameTO-220
Typical Fall Time (ns)16
Typical Rise Time (ns)8.6
Gate Charge Qg @10V (nC)2.4x10<sup>-8</sup> C
Transistor ConfigurationSingle
Maximum Power Dissipation50 W
Typical Gate Charge @ Vgs24 nC @ 10 V
max. operating temperature175 °C
min. operating temperature-55 °C
Maximum Gate Source Voltage-20 V, +20 V
Number of Elements per Chip1
Maximum Drain Source Voltage500 V
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-55 °C
Maximum Power Dissipation (mW)50000
Minimum Gate Threshold Voltage2V
Typical Gate Charge @ 10V (nC)24(Max)
Typical Gate Charge @ Vgs (nC)24(Max)@10V
Maximum Drain Source Resistance3 Ω
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8
Maximum Continuous Drain Current2.5 A
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)33
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.5
Typical Input Capacitance @ Vds (pF)360@25V
Maximum Drain Source Resistance (mOhm)3000@10V
drain-source on resistance RDS (on) max @VGS=10V3 Ω

Техническая документация