IRF8010STRLPBF, Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048070387
- Артикул
- IRF8010STRLPBF
- Бренд
- International Rectifier
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Mounting
- Surface Mount
Цена по запросу
(от 390 ₽)
Минимальный заказ: 215 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 100V 80A 3-контактный (2+Tab) D2PAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 9.65(Max)mm |
| Package Length | 10.67(Max)mm |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 20 |
| Process Technology | HEXFET |
| Структура | N-Channel |
| Standard Package Name | TO-263 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 120 |
| Typical Rise Time (ns) | 130 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 260000 |
| Typical Gate Charge @ 10V (nC) | 81 |
| Typical Gate Charge @ Vgs (nC) | 81@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 480 |
| Typical Turn-On Delay Time (ns) | 15 |
| Maximum Drain-Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 61 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Typical Gate to Drain Charge (nC) | 26 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 22 |
| Typical Reverse Recovery Time (ns) | 99 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 80 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 3830@25V |
| Typical Reverse Recovery Charge (nC) | 460 |
| Maximum Drain-Source Resistance (mOhm) | 15@10V |
| Maximum Gate-Source Leakage Current (nA) | 200 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 320 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 12@10V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 59@25V |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 80 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |